GENERAL DESCRIPTION

ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +0.80V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th) match to 2mV and 10mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stage

• Voltage comparator

• Voltage bias circuits

• Sample and Hold

• Analog inverter

• Level shifters

• Source followers and buffers

• Current multipliers

• Analog switches / multiplexers