GENERAL DESCRIPTION

ALD110802/ALD110902 are high precision monolithic quad/dual enhance ment mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.

FEATURES

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.20V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th)match (VOS) to 10mV

• High input impedance — 1012 Ω typical

• Positive, zero, and negative VGS(th)temperature coefficient

• DC current gain >108

• Low input and output leakage currents