DESCRIPTION

The AM8958 is the N & P-Channel enhancement

mode power field effect transistor using high cell

density DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching

performance. This device is particularly suited for

low voltage application such as notebook computer

power management and other battery powered

circuits, where high-side switching, low inline power

loss and resistance to transient are needed.

The AM8958 is available in SOP8 Package

FEATURES

N-Channel

 30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V

 30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V

P-Channel

 -30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V

 -30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V

 Super high density cell design for extremely low

RDS(ON)

 Exceptional on-resistance and Maximum DC

current capability

 Available in SOP8 Package

APPLICATION

 Power Management in Note book

 Portable Equipment

 Battery Powered System