位置:AM4102DR > AM4102DR详情

AM4102DR中文资料

厂家型号

AM4102DR

文件大小

752Kbytes

页面数量

9

功能描述

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AITSEMI

AM4102DR数据手册规格书PDF详情

DESCRIPTION

The AM4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

AM4102 is available in a TO252-2 package.

FEATURES

 VDS=30V, ID=50A

RDS(ON) <11mΩ@ VGS =10V

RDS(ON) <16mΩ@ VGS =5V

 High density cell design for ultra low RDSON

 Fully characterized Avalanche voltage and current

 Good stability and uniformity with high EAS

 Excellent package for good heat dissipation

 Special process technology for high ESD capability

 Available in a TO252-2 package.

APPLICATION

 Power switching application

 Hard switched and high frequency circuits

 Uninterruptible Power Supply

更新时间:2025-11-26 15:26:00
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全新原装现货!自家库存!