DESCRIPTION

The AM2342 is the N-Channel logic enhancement

mode power field effect transistor is produced using

high cell density. Advanced trench technology to

provide excellent RDS(ON).

This high density process is especially tailored to

minimize on-state resistance. These devices are

particularly suited for low voltage application, and

low in-line power loss are needed in a very small

outline surface mount package.

AM2342 is available in SOT-23 packages.

FEATURES

 20V/5.0A, RDS(ON) =25mΩ(typ.)@VGS =4.5V

 20V/4.5A, RDS(ON) =34mΩ(typ.)@VGS =2.5V

 20V/4.0A, RDS(ON) =48mΩ(typ.)@VGS =1.8V

 Super high density cell design for extremely low

RDS(ON)

 Exceptional on-resistance and Maximum DC

current capability

 Available in SOT-23 Package

APPLICATION

 Power Management in Note book

 Portable Equipment

 DSC

 LCD Display inverter

 Battery Powered System

 DC/DC Converter