位置:AG2106J8R > AG2106J8R详情

AG2106J8R中文资料

厂家型号

AG2106J8R

文件大小

997.35Kbytes

页面数量

15

功能描述

MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AITSEMI

AG2106J8R数据手册规格书PDF详情

DESCRIPTION

The AG2106 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

AG2106 is available in a SOP8 and DFN8(2x3) packages.

FEATURES

 Fully operational to +600 V

 3.3V logic compatible

 dV/dt Immunity ±50V/nsec

 Floating channel designed for bootstrap operation

 Gate drive supply range from 10V to 20V

 UVLO for both channels

 Output Source / Sink Current Capability 400mA / 800mA

 Cross Conduction Protection with 180ns Internal Fixed Dead Time

 -5V negative Vs ability

 Matched propagation delay for both channels

 Available in a SOP8 and DFN8(2x3) packages.

APPLICATION

 Small and medium- power motor driver

 Power MOSFET or IGBT driver

 Lighting ballast

 Half−Bridge Power Converters

 Full-Bridge Power Converters

更新时间:2025-12-3 15:01:00
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