PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,

32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.

FEATURES

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory

- Supported by industry standard programmer

45ns and 40ns maximum address access time (-55oC to +125oC)

TTL compatible input and TTL/CMOS compatible output levels

Three-state data bus

Low operating and standby current

- Operating: 125mA maximum @25MHz

· Derating: 3mA/MHz

- Standby: 2mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

- Total dose: 1E6 rad(Si)

- LETTH(0.25) ~ 100 MeV-cm2/mg

- SEL Immune >128 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90 geosynchronous heavy ion

- Memory cell LET threshold: >128 MeV-cm2/mg

QML Q & V compliant part

- AC and DC testing at factory

Packaging options:

- 28-lead 50-mil center flatpack (0.490 x 0.74)

- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

VDD: 5.0 volts + 10

Standard Microcircuit Drawing 5962-96891