GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-channel and P-channel

transistor pair intended for a broad range of analog applications. These

enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of a

N-channel MOSFET and a P-channel MOSFET in one package. The

ALD1115 is a dual version of the quad complementary ALD1105.

The ALD1115 offers high input impedance and negative current temperature

coefficient. The transistor pair is designed for precision signal

switching and amplifying applications in +1V to +10V systems where low

input bias current, low input capacitance and fast switching speed are

desired. Since these are MOSFET devices, they feature very large

(almost infinite) current gain in a low frequency, or near DC, operating

environment. When connected in parallel with sources, drains and gates

connected together, a CMOS analog switch can be constructed. In

addition, the ALD1115 is intended as a building block for CMOS inverters,

differential amplifier input stages, transmission gates, and multiplexer

applications.

The ALD1115 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 100pA at room temperature. V+ is connected to the substrate,

which is the most positive voltage potential of the ALD1115, usually SP

(5). Similarly, V- is connected to the most negative voltage potential of the

ALD1115, usually SN (1).

FEATURES

• Thermal tracking between N-channel and P-channel

• Low threshold voltage of 0.7V for both N-channel and

P-channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement-mode (normally off)

• DC current gain 109

• Single N-channel MOSFET and single P-channel

MOSFET in one package

APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers