GENERAL DESCRIPTION

ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically

Programmable Analog Device) N-channel MOSFETs with electrically

adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are

matched and adjusted (e-trimmed) at the factory resulting in quad/dual

MOSFETs that are highly matched in threshold voltages and other electrical

characteristics. For a given input voltage, the threshold voltage of a

MOSFET device determines its drain on-current, resulting in an onresistance

characteristic that can be precisely preset and then controlled by

the input voltage very accurately.

Using an ALD1108E/ALD1110E is simple and straight forward. The

MOSFETs function as n-channel MOSFETs, except that all the devices

have exceptional matching to each other in electrical characteristics. Since

these devices are on the same monolithic chip, they also exhibit excellent

tempco matching characteristics.

These MOSFET devices have very low input currents, and as a result a very

high input impedance (>1012 Ohm). The gate voltage from a control source

can drive many MOSFET inputs with practically no loading effects. Used in

precision current mirror or current multiplier applications, they can be used

to provide a current source over a 100nA to 3mA range, and with either a

positive, negative or zero tempco.

APPLICATIONS

• Precision PC-based electronic calibration

• Automated voltage trimming or setting

• Remote voltage or current adjustment of

inaccessible nodes

• PCMCIA based instrumentation trimming

• Electrically adjusted resistive load

• Temperature compensated current sources and

current mirrors

• Electrically trimmed/calibrated current sources

• Permanent precision preset voltage level shifter

• Low temperature coefficient voltage and/or current

bias circuits

• Multiple preset voltage bias circuits

• Multiple channel resistor pull-up or pull-down circuits

• Microprocessor based process control systems

• Portable data acquisition systems

• Battery operated terminals and instruments

• Remote telemetry systems

• E-trimmable gain amplifiers

• Low level signal conditioning

• Sensor and transducer bias currents

• Neural networks

FEATURES

• Electrically Programmable Analog Device

• Proven, non-volatile CMOS technology

• Operates from 2V, 3V, 5V to 10V

• Flexible basic circuit building block and design

element

• Very high resolution -- average e-trim voltage

resolution of 0.1mV

• Wide dynamic range -- current levels from 0.1mA

to 3000mA

• Voltage adjustment range from 1.000V to 3.000V

in 0.1mV steps

• Typical 10-year drift of less than 2mV

• Usable in voltage mode or current mode

• High input impedance -- 1012W

• Very high DC current gain -- greater than 109

• Device operating current has positive temperature

coefficient range and negative temperature

coefficient range with cross-over zero temperature

coefficient current level at 68mA

• Tight matching and tracking of on-resistance

between different devices with e-trim

• Very low input currents and leakage currents

• Low cost, monolithic technology

• Application-specific or in-system programming modes

• Opptional user software-controlled automation

• Opptional e-trim of any standard/custom configuration

• Micropower operation

• Available in standard PDIP, SOIC and hermetic CDIP

packages

• Suitable for matched-pair balanced circuit configuration

• Suitable for both coarse and fine trimming, as well as

matched MOSFET array applications

• RoHS compliant