位置:LTC7891RUFDMPBF > LTC7891RUFDMPBF详情

LTC7891RUFDMPBF中文资料

厂家型号

LTC7891RUFDMPBF

文件大小

1755.78Kbytes

页面数量

36

功能描述

100 V, Low IQ, Synchronous Step-Down Controller for GaN FETs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AD

LTC7891RUFDMPBF数据手册规格书PDF详情

GENERAL DESCRIPTION

The LTC7891 is a high performance, step-down, dc-to-dc switching

regulator controller that drives all N-channel synchronous gallium

nitride (GaN) field effect transistor (FET) power stages from input

voltages up to 100 V. The LTC7891 solves many of the challenges

traditionally faced when using GaN FETs. The LTC7891 simplifies

the application design while requiring no protection diodes and no

other additional external components compared to a silicon metaloxide

semiconductor field effect transistor (MOSFET) solution.

The internal smart bootstrap switch prevents overcharging of the

BOOST pin to SW pin high-side driver supplies during dead times,

protecting the gate of the top GaN FET. The LTC7891 internally

optimizes the gate driver timing on both switching edges to achieve

smart near zero dead times, significantly improving efficiency and

allowing for high frequency operation, even at high input voltages.

Alternatively, the user can adjust the dead times with external

resistors for margin or to tailor the application.

The gate drive voltage of the LTC7891 can be precisely adjusted

from 4 V to 5.5 V to optimize performance, and to allow the use of

different GaN FETs, or even logic level MOSFETs.

Note that throughout this data sheet, multifunction pins, such as

PLLIN/SPREAD, are referred to either by the entire pin name or

by a single function of the pin, for example, PLLIN, when only that

function is relevant.

FEATURES

► GaN drive technology fully optimized for GaN FETs

► Wide VIN range: 4 V to 100 V

► Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V

► No catch, clamp, or bootstrap diodes needed

► Internal smart bootstrap switches prevent overcharging of highside

driver supplies

► Internally optimized, smart near zero dead times or resistor

adjustable dead times

► Split output gate drivers for adjustable turn on and turn off driver

strengths

► Accurate adjustable driver voltage and UVLO

► Low operating IQ: 5 μA (48 VIN to 5 VOUT)

► Programmable frequency (100 kHz to 3 MHz)

► Phase lockable frequency (100 kHz to 3 MHz)

► Spread spectrum frequency modulation

► 28-lead (4 mm × 5 mm) side wettable QFN package

APPLICATIONS

► Industrial power systems

► Military avionics and medical systems

► Telecommunications power systems

更新时间:2026-1-29 11:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ADI
25+
40-Lead QFN (6mm x 6mm, Plasti
5500
用于 GaN FET 的低 IQ、双路、双相同步升压控制器
ADI
2534+
原厂封装
25000
15年芯片行业经验/只供原装正品:13570885961邹小姐
ADI/亚德诺
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!