FEATURES

Integrated dual-channel RF front end

2-stage LNA and high power SPDT switch

On-chip bias and matching

Single supply operation

Gain

High gain mode: 32 dB typical at 3.6 GHz

Low gain mode: 16 dB typical at 3.6 GHz

Low noise figure

High gain mode: 1.45 dB typical at 3.6 GHz

Low gain mode: 1.45 dB typical at 3.6 GHz

High isolation

RXOUT-CHA and RXOUT-CHB: 47 dB typical

TERM-CHA and TERM-CHB: 52 dB typical

Low insertion loss: 0.65 dB typical at 3.6 GHz

High power handling at TCASE = 105°C

Full lifetime

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec operation)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 32 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

6 mm × 6 mm, 40-lead LFCSP package

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output and active antenna systems

TDD-based communication systems