FEATURES

► Ultrawideband frequency range: 100 MHz to 55 GHz

► Nonreflective design

► Low insertion loss

► 1.3 dB typical to 18 GHz

► 1.9 dB typical to 40 GHz

► 2.5 dB typical to 50 GHz

► 3.6 dB typical to 55 GHz

► High isolation

► 43 dB typical to 40 GHz

► 38 dB typical to 55 GHz

► High input linearity

► 0.1 dB power compression (P0.1dB): 31 dBm

► Third-order intercept (IP3): 53 dBm

► High power handling at TCASE = 85°C

► 30 dBm through path

► 24 dBm terminated path

► 30 dBm hot switching

► RF settling time (0.1 dB final RF output): 30 ns

► No low-frequency spurious signals

► All-off state control

► Positive control interface: CMOS-/LVTTL-compatible

► 15-pad, 3.021 mm × 2.305 mm bare die [CHIP]

APPLICATIONS

► Test and instrumentation

► Cellular infrastructure: 5G millimeterwave (mmW)

► Military radios, radars, and electronic countermeasures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)

► Industrial scanners