GENERAL DESCRIPTION

The ADRF5301 is a reflective, SPDT switch manufactured in the

silicon process. The ADRF5301 was developed for 5G applications from 37 GHz

to 49 GHz. This device has a low insertion loss of 1.4 dB, high

isolation of 30 dB, and RF input power handling capability of 28

dBm average and 36 dBm peak.

The ADRF5301 incorporates a negative voltage generator (NVG) to

operate with a single positive supply of 3.3 V applied to the VDD

pin. The device employs complementary metal-oxide semiconductor

(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible

control. The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant,

land grid array package and can operate from −40°C to +105°C.

FEATURES

► Reflective design

► Low insertion loss: 1.4 dB typical

► High isolation: 30 dB typical

► High input linearity:

► P0.1dB: 36 dBm

► Input IP3: 52 dBm

► High RF power handling

► 28 dBm average

► 36 dBm peak

► Single-supply operation: 3.3V

► Internal NVG

► RF settling time (0.1 dB final RF output): 50 ns

► 20-terminal, 3 mm × 3 mm, land grid array (LGA) package

APPLICATIONS

► Industrial scanner

► Test instrumentation

► Cellular infrastructure mmWave 5G

► Military radios, radars, electronic counter measures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)