Description

The ACE16242A is the N-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits, and low in-line power loss are needed

in a very small outline surface mount package.

Features

⚫ 20V/3.3A,RDS(ON)=19mΩ@VGS=4.5V

⚫ 20V/2.8A,RDS(ON)=24mΩ@VGS=2.5V

⚫ 20V/2.3A,RDS(ON)=32mΩ@VGS=1.8V

⚫ Super high-density cell design for extremely low RDS (ON)

⚫ Exceptional on-resistance and maximum DC current capability

Applications

⚫ Power Management in Note book

⚫ Portable Equipment

⚫ Battery Powered System

⚫ DC/DC Converter

⚫ Load Switch

⚫ DSC

⚫ LCD Display inverter