Description

The ACE12322A is the Dual N-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process is especially

tailored to minimize on-state resistance. These devices are particularly suited for low voltage application

notebook computer power management and other battery powered circuits where high-side switching,

low in-line power loss and resistance to transients are needed.

Features

 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V

 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V

 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V

 Super high density cell design for extremely low RDS (ON)

 Exceptional on-resistance and maximum DC current capability

 DFN2X2-6L package design

Applications

 Power Management in Note book

 Portable Equipment

 Battery Powered System

 DC/DC Converter

 Load Switch

 DSC

 LCD Display inverter