Description

The ACE12021A is the Dual P-Channel enhancement mode Power field effect transistors are

produced using high cell density, DMOS trench technology. This high-density process is especially

tailored to minimize on-state resistance and provide superior switching performance. These devices are

particularly suited for low voltage applications such as notebook computer power management and other

battery power circuits where high-side switching, low in-line power loss, and resistance to transients are

needed.

Features

⚫ -20V/0.45A, RDS(ON)=520mΩ@VGS=-4.5V

⚫ -20V/0.35A, RDS(ON)=700mΩ@VGS=-2.5V

⚫ -20V/0.25A, RDS(ON)=1500mΩ@VGS=-1.8V

⚫ Super high-density cell design for extremely low RDS (ON)

⚫ Exceptional on-resistance and maximum DC current capability

Application

⚫ Power Management in Note book

⚫ Portable Equipment

⚫ Battery Power Systems

⚫ DC/DC Converter

⚫ Load Switch

⚫ DSC

⚫ LCD Display inverter