Description

The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance and provide superior

switching performance. These devices are particularly suited for low voltage application such as notebook

computer power management and other batter powered circuits where high-side switching, low in-line

power loss and resistance to transients are needed.

Features

⚫ 30V/0.95A, RDS(ON)=550mΩ@VGS=4.5V

⚫ 30V/0.75A, RDS(ON)=650mΩ@VGS=2.5V

⚫ 30V/0.65A, RDS(ON)=850mΩ@VGS=1.8V

⚫ Super high-density cell design for extremely low RDS(ON)

⚫ Exceptional on-resistance and maximum DC current capability

Application

⚫ Power Management in Note book

⚫ Portable Equipment

⚫ Battery Powered System

⚫ DC/DC Converter

⚫ Load Switch

⚫ DSC

⚫ LCD Display inverter