HIGHLY RELIABLE DIN SIZE LIMIT SWITCHES

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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

6-BIT ANALOG-TO-DIGITAL CONVERTER

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6-BIT ANALOG-TO-DIGITAL CONVERTER

文件：115.78 Kbytes Page：7 Pages

6-BIT ANALOG-TO-DIGITAL CONVERTER

文件：115.78 Kbytes Page：7 Pages