Dual N-Channel MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and impro

40V 双 N 通道 HEXFET Power MOSFET， 采用 PQFN 5 x 6 L 封装

Dual N-Channel MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and impro

Electronic, 25 C #22 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 25 Conductor 22AWG (7x30) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

All-Code Data Synchronizer

文件：403.77 Kbytes Page：35 Pages

84mm x 59mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN, 216 CHIPS, 4.2V 1.08A

文件：87.83 Kbytes Page：1 Pages