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型号 功能描述 生产厂家 企业 LOGO 操作
AUIRF1018ES

Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

文件:664.22 Kbytes Page:10 Pages

INFINEON

英飞凌

AUIRF1018ES

AUTOMOTIVE GRADE

文件:249.06 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AUIRF1018ES

Advanced Process Technology

文件:249.06 Kbytes Page:11 Pages

IRF

AUIRF1018ES

Power-MOSFET-20V-800V Automotive MOSFET-50V-80V N-Channel Automotive MOSFET

INFINEON

英飞凌

Advanced Process Technology

文件:249.06 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:249.06 Kbytes Page:11 Pages

IRF

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

POLYFET

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

MOTOROLA

摩托罗拉

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

PHILIPS

飞利浦

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3

PHILIPS

飞利浦

AUIRF1018ES产品属性

  • 类型

    描述

  • 型号

    AUIRF1018ES

  • 功能描述

    MOSFET 60V 79A 8.4 mOhm Automotive MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-7-31 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
23+
D2-Pak
4787
原厂授权代理,海外优势订货渠道。可提供大量库存,详
IR
13+
TO-263
8950
Infineon/英飞凌
26+
D2PAK
25000
原装正品,假一赔十!
IR
25+
TO-263
30000
代理全新原装现货,价格优势
Infineon/英飞凌
25+
D2PAK
12700
买原装认准中赛美
Infineon/英飞凌
21+
D2PAK
6820
只做原装,质量保证
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
Infineon/英飞凌
25+
D2PAK
28000
原装正品,可来电咨询
INFINEON
13+
TO-263
8994
全新 发货1-2天

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