高边 mosfet 驱动器，适用于极低Rdson的汽车应用，具有过流，过温保护和诊断功能。

\n优势:\n• 保护开关，Rds（on）低至0.75mOhm，可通过驱动并联的两个MOSFET来执行操作\n• 短路保护\n• 过温保护\n• 数字化诊断\n ;

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HIGH-SIDE 8SOIC 集成电路（IC） 栅极驱动器

MOSFET DRIVER WITH PROTECTION AND DIAGNOSTIC

文件：823.55 Kbytes Page：22 Pages

MOSFET DRIVER WITH PROTECTION AND DIAGNOSTIC

文件：485.62 Kbytes Page：19 Pages

MOSFET DRIVER WITH PROTECTION AND DIAGNOSTIC

文件：485.62 Kbytes Page：19 Pages

MOSFET DRIVER WITH PROTECTION AND DIAGNOSTIC

文件：823.55 Kbytes Page：22 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HIGH-SIDE 8SOIC 集成电路（IC） 栅极驱动器

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

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