N-Channel Power MOSFET

N-Channel Power MOSFET 40V, 65A, 9.1mΩ, Single ATPAK Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

N 沟道，功率 MOSFET，40V，65A，9.1mΩ，单 ATPAK

ATP207 是一款 N 沟道功率 MOSFET，40V，65A，9.1mΩ，单 ATPAK，适用于通用开关应用。 • Low on resistance\n• Large current\n• 4.5 V drive\n• Slim package\n• Halogen free compliance\n• Protection diode in;

N-Channel Power MOSFET

N-Channel Power MOSFET 40V, 65A, 9.1mΩ, Single ATPAK Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

General-Purpose Switching Device Applications

文件：449.37 Kbytes Page：7 Pages

封装/外壳：ATPAK（2 引线 + 接片） 包装：管件 描述：MOSFET N-CH 40V 65A ATPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

General-Purpose Switching Device Applications

文件：449.37 Kbytes Page：7 Pages

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V

Operational Amplifiers

文件：194.55 Kbytes Page：10 Pages

Operational Amplifiers

文件：194.55 Kbytes Page：10 Pages

Darlington Phototransistor

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