General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

N-Channel Power MOSFET

N-Channel Power MOSFET 30V, 100A, 5.6mΩ, Single ATPAK Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

N-Channel Power MOSFET, 30V, 100A, 5.6mOhm, Single ATPAK

Standard Crystals

Surface Mount Quartz Crystal DESCRIPTION The ATP-SM crystal series offers excellent longterm stability and reliability in a proven plastic molded package. The excellent shock performance makes it suitable for today’s microprocessor, communication, consumer electronic and networking applications.

N-Channel Power MOSFET

N-Channel Power MOSFET 30V, 100A, 5.6mΩ, Single ATPAK Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

General-Purpose Switching Device Applications

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Surface Mount Quartz Crystal

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General-Purpose Switching Device Applications

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POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 2.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Glass passivated junction • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • Both normal and Pb free

PLASTIC SILICON RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Low cost • High current capability • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • 2.0 ampere operation at TA = 55°C with no thermal runawa

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Negative Regulator

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