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型号 功能描述 生产厂家 企业 LOGO 操作
ATP113

P-Channel Power MOSFET

Features • ON-resistance RDS(on)1=22.5mΩ(typ.) • Input Capacitance Ciss=2400pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ATP113

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=22.5mΩ(typ.) • Input Capacitance Ciss=2400pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ATP113

P 沟道,功率 MOSFET,-60V,-35A,29.5mΩ

ATP113 is P-Channel Power MOSFET, -60V, -35A, 29.5mΩ, Single ATPAK for General-Purpose Switching Device Application. • ON-resistance RDS(on)1 = 22.5mΩ (typ)\n• 4V drive \n• Input Capacitance Ciss=2400pF(typ)\n• Protection diode in;

ONSEMI

安森美半导体

P-Channel Power MOSFET

Features • ON-resistance RDS(on)1=22.5mΩ(typ.) • Input Capacitance Ciss=2400pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

文件:481.43 Kbytes Page:7 Pages

SANYO

三洋

General-Purpose Switching Device Applications

文件:481.43 Kbytes Page:7 Pages

SANYO

三洋

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

ONSEMI

安森美半导体

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

MOTOROLA

摩托罗拉

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

ATP113产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    P-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    -60

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    -2.6

  • ID Max (A):

    -35

  • PD Max (W):

    50

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    38

  • RDS(on) Max @ VGS = 10 V(mΩ):

    29.5

  • Qg Typ @ VGS = 10 V (nC):

    55

  • Ciss Typ (pF):

    2400

  • Package Type:

    DPAK (Single Gauge)/ATPAK

更新时间:2026-8-1 17:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
26+
NA
8000
原装现货 极速发货 一站式原装元器件BOM配单
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
25+
DPAK (Single Gauge)
11580
原装正品现货,原厂订货,可支持含税原型号开票。
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ON
TO-252
21+
50000
原装正品现货 支持BOM配单!
ONSEMI
17+
TO-252
470
全新 发货1-2天
ON
19+
TO-252
9000
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
ON
24+
N/A
8000
全新原装正品,现货销售
ON
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百

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