P-Channel Silicon MOSFET General-Purpose Switching Device Applications

P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features •Low ON-resistance •Slim package • Halogen free compliance •Large current •4.5V drive • Protection diode in

P-Channel Power MOSFET

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P-Channel Power MOSFET, -30V, -25A, 30mΩ

General-Purpose Switching Device Applications

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P-Channel Power MOSFET

文件：343.51 Kbytes Page：7 Pages

General-Purpose Switching Device Applications

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封装/外壳：ATPAK（2 引线 + 接片） 包装：管件 描述：MOSFET P-CH 30V 25A ATPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Smooth, high torque, roller ratchet handle

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Precision Wirewound Resistors

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