2nd Generation EE Complex Programmable Logic Devices

文件：1.68331 Mbytes Page：76 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base d

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 15 amperes.

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

SPDT SWITCH GaAs MMIC

文件：361.2 Kbytes Page：11 Pages