2-10 GHz Medium Power Gallium Arsenide FET

Description The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects b

Inductive Sensor

Features ■M30 × 1.5 threaded tube ■Chrome-plated brass ■DC 3-wire, 10…30 VDC ■NO contact, NPN output ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that interacts with t