2-18 GHz Low Noise Gallium Arsenide FET

Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. Features • Low Noise Figure: 1.1 dB Typical at 12 GH

2-18 GHz Low Noise Gallium Arsenide FET

2-18 GHz Low Noise Gallium Arsenide FET

Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. Features • Low Noise Figure: 1.1 dB Typical at 12 GH

Inductive Sensor

Features ■Rectangular, height 12mm ■Active face, lateral ■Plastic, PA12‐GF30 ■AC 2-wire, 20…250 VDC ■DC 2-wire, 10…300 VDC ■NO contact ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagn

Nytye® Nylon Cable Ties

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Nytye® Nylon Cable Ties

文件：94.11 Kbytes Page：1 Pages

Nytye® Nylon Cable Ties

文件：94.11 Kbytes Page：1 Pages

Nytye® Nylon Cable Ties

文件：105.62 Kbytes Page：1 Pages