2-18 GHz Low Noise Gallium Arsenide FET

Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. Features • Low Noise Figure: 1.1 dB Typical at 12 GH

2-18 GHz Low Noise Gallium Arsenide FET

2-18 GHz Low Noise Gallium Arsenide FET

Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. Features • Low Noise Figure: 1.1 dB Typical at 12 GH

ADSL Transformer SMD Type: CEP >Series>

◆ Product Description • 17.7× 13.5mm Max.(L× W),12.3mm Max. Height. ◆ Feature • xDSL line transformer. • Ideally used in ADSL customer premises equipment, SHDSL&HDSL, splitter and VDSL. • Approved by TI, Silicon Labs, Broadcom and Conexant. • RoHS Compliance.

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

THROUGH HOLE CLOCK OSCILLATORS - TTL COMPATIBLE

文件：98.1 Kbytes Page：2 Pages

3 Phase Noise filter for FA Servo System

文件：1.049 Mbytes Page：4 Pages