High Self-Resonance

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RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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High Self-Resonance

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High Self-Resonance

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High Self-Resonance

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PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 2.5 AMP, STANDARD AND FAST RECOVERY

Three Phase Bridges, 2.5 Amp, Standard and Fast Recovery FEATURES • Miniature Package • Recovery Time : to 500 ns • Surge Ratings : to 25 A • PIV : from 100 to 600 V • Controlled Avalanche Characteristics • Only Fused-in-Glass Diodes Used

Temperature Sensors Line Guide

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PUSHBUTTON SWITCHES - SNAP-ACTING

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Highly compliant

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