位置:首页 > IC中文资料第2272页 > ATC20
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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ATC20 | Cell-based ASIC Description TheAtmelATC20CBICfamilyisfabricatedonaproprietary0.21micronfive-layer-metalCMOSprocessintendedforusewithasupplyvoltageof1.8V±0.15V.ThefollowingtableshowstherangeforwhichAtmellibrarycellshavebeencharacterized. Features •ComprehensiveLibraryof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | ||
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
Alumina Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-0050JN-93isa.5dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmounting | BARRY Vishay Barry | |||
1 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-0100JN-93isa1dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W | BARRY Vishay Barry | |||
1 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-0100JN-93isa1dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W | BARRY Vishay Barry | |||
2 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-0200JN-93isa2dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W | BARRY Vishay Barry | |||
2 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-0200JN-93isa2dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W | BARRY Vishay Barry | |||
3 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-0300JN-93isa3dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrange fromDCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W | BARRY Vishay Barry | |||
3 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-0300JN-93isa3dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrange fromDCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W | BARRY Vishay Barry | |||
Alumina Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-0400JN-93isa4dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmounting | BARRY Vishay Barry | |||
10 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-1000JN-93isa10dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmountingsurfacetemperature of100°C.ItoffersafequencyrangefromDCto5GHz. Features: ♦AluminaMaterial ♦DC-5GHzPerformance ♦5Wa | BARRY Vishay Barry | |||
10 dB CHIP ATTENUATOR GeneralDescription: TheATC2010CT-1000JN-93isa10dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmountingsurfacetemperature of100°C.ItoffersafequencyrangefromDCto5GHz. Features: ♦AluminaMaterial ♦DC-5GHzPerformance ♦5Wa | BARRY Vishay Barry | |||
Alumina Features: ♦AluminaMaterial ♦DC-5GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-1500JN-93-02isa15dBAlumina chipattenuator.Ithasaninputpowerratingof5watts, whilemaintainingaconstant | BARRY Vishay Barry | |||
Aluminum Nitride Features: ♦AluminumNitrideMaterial ♦DC-4GHzPerformance ♦10WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-2000JN-2S-01isa20dB AluminumNitridechipattenuator.Ithasaninputpower of10watts,whilemaintain | BARRY Vishay Barry | |||
Alumina Features: ♦AluminaMaterial ♦DC-4GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-2000JN-93isa20dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmounting | BARRY Vishay Barry | |||
Alumina Features: ♦AluminaMaterial ♦DCto2.5GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-3000JN-93isa30dBAlumina surfacemountchipattenuator.Ithasaninputpower of5watts,whilemaintaininga | BARRY Vishay Barry | |||
High Reliability 文件:194.54 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
High Reliability 文件:194.54 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
High Reliability 文件:194.54 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
High Reliability 文件:194.54 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Rugged Construction 文件:247.04 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件:868.17 Kbytes Page:13 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 文件:748.8 Kbytes Page:11 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power LDMOS Transistors 文件:634.77 Kbytes Page:20 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件:1.0447 Mbytes Page:19 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件:1.19064 Mbytes Page:19 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power LDMOS Transistors 文件:985.86 Kbytes Page:21 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件:1.49804 Mbytes Page:18 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件:1.19064 Mbytes Page:19 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 文件:748.8 Kbytes Page:11 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件:1.0447 Mbytes Page:19 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件:1.47981 Mbytes Page:18 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Gallium Arsenide pHEMT RF Power Field Effect Transistor 文件:1.13431 Mbytes Page:25 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件:1.49804 Mbytes Page:18 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件:1.47981 Mbytes Page:18 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Rugged Construction 文件:247.04 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Rugged Construction 文件:247.04 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Rugged Construction 文件:247.04 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
封装/外壳:2010(5025 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DC-3GHZ 5W AL2O3 SURFACE MOUNT C RF/IF,射频/中频和 RFID 衰减器 | BARRY Vishay Barry | |||
封装/外壳:2010(5025 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DC-3GHZ 5W AL2O3 SURFACE MOUNT C RF/IF,射频/中频和 RFID 衰减器 | BARRY Vishay Barry |
ATC20产品属性
- 类型
描述
- 型号
ATC20
- 制造商
Mersen
- 功能描述
FERRAZ SHAWMUT BLADE TYPE TERMINAL CAR FUSES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AUTO |
2021+ |
4980 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
ATC |
2022 |
SMD |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ATC |
21+ |
VQFN |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
ATC |
23+ |
N/A |
50000 |
全新原装现货热卖 |
|||
ATC |
22+ |
假一赔十 |
11000 |
原装正品,有挂有货,假一赔十 |
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ATC |
24+25+/26+27+ |
SMD-贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ATC |
23+ |
NA |
113 |
专做原装正品,假一罚百! |
|||
ATC |
SMD |
198589 |
假一罚十原包原标签常备现货! |
||||
ATC |
22+ |
原厂原封 |
8200 |
全新原装现货!自家库存! |
|||
ATC |
23+ |
3505 |
原厂原装正品 |
ATC20规格书下载地址
ATC20参数引脚图相关
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- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
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- bcm2727
- bcm
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- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- ATC600F
- ATC-5S
- ATC-5D
- ATC550L
- ATC504L
- ATC500S
- ATC-5
- ATC-40
- ATC-4
- ATC-35
- ATC35
- ATC-30
- ATC30
- ATC-3
- ATC-25
- ATC25
- ATC-24S
- ATC24184S
- A-TC24184F
- ATC24184F
- ATC2225X7R105KL4AT
- ATC210-48D12-03J
- ATC210
- ATC-20RLD
- ATC-20BC
- ATC206X104KL2AT
- ATC200B562KW50T
- ATC200B393KT50XT
- ATC200B203KT50XT
- ATC200B104MPX
- ATC200B104MP50X
- ATC200B104KP50
- ATC200B103KT50XT
- ATC200B
- ATC200A56MW50XT
- ATC200A56MW50XI
- ATC200A
- ATC-20
- ATC-2
- ATC2
- ATC18RHA_08
- ATC18RHA
- ATC18M
- ATC180041J
- ATC180041
- ATC-18004
- ATC18004
- ATC180031J
- ATC180031
- ATC18003
- ATC18002
- ATC18001
- ATC18_06
- ATC18
- ATC17-9-1939PN
- ATC175B270GP500X
- ATC-15S-E1
- ATC-15S-DN
- ATC-15S
- ATC-15D
- ATC-15
- ATC13
- ATC-12S
- ATC-12D
- ATC111
- ATC100E
- ATC100C
- ATC100B
- ATC100A
- ATC-10
- ATC-1
- ATC_16
- ATB3225
- AT-B10
- ATB010
ATC20数据表相关新闻
ATATMEL-ICE-ADPT 插座和适配器
ATATMEL-ICE-ADPT 插座和适配器10-leadsquidcableflatcble/adptrbrd
2023-4-24ATATMEL-ICE 硬件调试器
ATATMEL-ICE硬件调试器Atmel-ICEdebuggerwithaccessories
2023-4-24ATC2010CT-0100JN-93TR射频芯片衰减器
射频衰减器在DC至5GHz范围内具有稳定的衰减性能,衰减值范围为0.5dB至30dB
2023-2-24ATECC508A-MAHDA-T 安全芯片
决对公司原装现货库存,需要敬请联系曾小姐,15820796658/QQ:1925232495
2021-6-23ATECC508A-MAHDA-T全新进口原装正品现货
ATECC508A-MAHDA-T
2021-6-2ATAES132A-SHER-B(原厂授权中国分销商)
主要参数: 集成电路(IC) 类型:验证芯片 应用:网络和通信 安装类型:表面贴装型 封装:8-SOIC(0.154,3.90mm宽)
2020-3-10
DdatasheetPDF页码索引
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