型号 功能描述 生产厂家&企业 LOGO 操作
ATC20

Cell-based ASIC

Description TheAtmelATC20CBICfamilyisfabricatedonaproprietary0.21micronfive-layer-metalCMOSprocessintendedforusewithasupplyvoltageof1.8V±0.15V.ThefollowingtableshowstherangeforwhichAtmellibrarycellshavebeencharacterized. Features •ComprehensiveLibraryof

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

Alumina

Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-0050JN-93isa.5dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmounting

BARRY

Vishay Barry

BARRY

1 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-0100JN-93isa1dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W

BARRY

Vishay Barry

BARRY

1 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-0100JN-93isa1dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W

BARRY

Vishay Barry

BARRY

2 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-0200JN-93isa2dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W

BARRY

Vishay Barry

BARRY

2 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-0200JN-93isa2dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrangefrom DCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W

BARRY

Vishay Barry

BARRY

3 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-0300JN-93isa3dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrange fromDCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W

BARRY

Vishay Barry

BARRY

3 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-0300JN-93isa3dB Aluminachipattenuator.Ithasaninputpowerof 5watts,whilemaintainingaconstantmountingsurface temperatureof100°C.Itoffersafrequencyrange fromDCto3GHz. Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5W

BARRY

Vishay Barry

BARRY

Alumina

Features: ♦AluminaMaterial ♦DC-3GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-0400JN-93isa4dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmounting

BARRY

Vishay Barry

BARRY

10 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-1000JN-93isa10dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmountingsurfacetemperature of100°C.ItoffersafequencyrangefromDCto5GHz. Features: ♦AluminaMaterial ♦DC-5GHzPerformance ♦5Wa

BARRY

Vishay Barry

BARRY

10 dB CHIP ATTENUATOR

GeneralDescription: TheATC2010CT-1000JN-93isa10dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmountingsurfacetemperature of100°C.ItoffersafequencyrangefromDCto5GHz. Features: ♦AluminaMaterial ♦DC-5GHzPerformance ♦5Wa

BARRY

Vishay Barry

BARRY

Alumina

Features: ♦AluminaMaterial ♦DC-5GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-1500JN-93-02isa15dBAlumina chipattenuator.Ithasaninputpowerratingof5watts, whilemaintainingaconstant

BARRY

Vishay Barry

BARRY

Aluminum Nitride

Features: ♦AluminumNitrideMaterial ♦DC-4GHzPerformance ♦10WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-2000JN-2S-01isa20dB AluminumNitridechipattenuator.Ithasaninputpower of10watts,whilemaintain

BARRY

Vishay Barry

BARRY

Alumina

Features: ♦AluminaMaterial ♦DC-4GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-2000JN-93isa20dBAlumina chipattenuator.Ithasaninputpowerof5watts,while maintainingaconstantmounting

BARRY

Vishay Barry

BARRY

Alumina

Features: ♦AluminaMaterial ♦DCto2.5GHzPerformance ♦5WattInputPower ♦CT=MatteTinoverNickeloverSilver ♦SolderMountable GeneralDescription: TheATC2010CT-3000JN-93isa30dBAlumina surfacemountchipattenuator.Ithasaninputpower of5watts,whilemaintaininga

BARRY

Vishay Barry

BARRY

High Reliability

文件:194.54 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

High Reliability

文件:194.54 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

High Reliability

文件:194.54 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

High Reliability

文件:194.54 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:868.17 Kbytes Page:13 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

文件:748.8 Kbytes Page:11 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power LDMOS Transistors

文件:634.77 Kbytes Page:20 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件:1.0447 Mbytes Page:19 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.19064 Mbytes Page:19 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power LDMOS Transistors

文件:985.86 Kbytes Page:21 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.49804 Mbytes Page:18 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.19064 Mbytes Page:19 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

文件:748.8 Kbytes Page:11 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件:1.0447 Mbytes Page:19 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件:1.47981 Mbytes Page:18 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Gallium Arsenide pHEMT RF Power Field Effect Transistor

文件:1.13431 Mbytes Page:25 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.49804 Mbytes Page:18 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件:1.47981 Mbytes Page:18 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

封装/外壳:2010(5025 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DC-3GHZ 5W AL2O3 SURFACE MOUNT C RF/IF,射频/中频和 RFID 衰减器

BARRY

Vishay Barry

BARRY

封装/外壳:2010(5025 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DC-3GHZ 5W AL2O3 SURFACE MOUNT C RF/IF,射频/中频和 RFID 衰减器

BARRY

Vishay Barry

BARRY

ATC20产品属性

  • 类型

    描述

  • 型号

    ATC20

  • 制造商

    Mersen

  • 功能描述

    FERRAZ SHAWMUT BLADE TYPE TERMINAL CAR FUSES

更新时间:2024-6-6 14:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AUTO
2021+
4980
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ATC
2022
SMD
80000
原装现货,OEM渠道,欢迎咨询
ATC
21+
VQFN
9800
只做原装正品假一赔十!正规渠道订货!
ATC
23+
N/A
50000
全新原装现货热卖
ATC
22+
假一赔十
11000
原装正品,有挂有货,假一赔十
ATC
24+25+/26+27+
SMD-贴片
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
ATC
23+
NA
113
专做原装正品,假一罚百!
ATC
SMD
198589
假一罚十原包原标签常备现货!
ATC
22+
原厂原封
8200
全新原装现货!自家库存!
ATC
23+
3505
原厂原装正品

ATC20芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • MTRONPTI
  • NTE
  • P-TEC
  • SLPOWER
  • TALEMA
  • Yamaha

ATC20数据表相关新闻