Cell-based ASIC

Description The Atmel ATC20 CBIC family is fabricated on a proprietary 0.21 micron five-layer-metal CMOS process intended for use with a supply voltage of 1.8V ± 0.15V. The following table shows the range for which Atmel library cells have been characterized. Features • Comprehensive Library of

Cell-based ASIC

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

Alumina

Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 Watt Input Power ♦ CT = Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-0050JN-93 is a .5 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting

1 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0100JN-93 is a 1 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

1 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0100JN-93 is a 1 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

2 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0200JN-93 is a 2 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

2 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0200JN-93 is a 2 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

3 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0300JN-93 is a 3 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

3 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0300JN-93 is a 3 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

Alumina

Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 Watt Input Power ♦ CT = Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-0400JN-93 is a 4 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting

10 dB CHIP ATTENUATOR

General Description: The ATC2010CT-1000JN-93 is a 10 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a fequency range from DC to 5 GHz. Features: ♦ Alumina Material ♦ DC - 5 GHz Performance ♦ 5 Wa

10 dB CHIP ATTENUATOR

General Description: The ATC2010CT-1000JN-93 is a 10 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a fequency range from DC to 5 GHz. Features: ♦ Alumina Material ♦ DC - 5 GHz Performance ♦ 5 Wa

Alumina

Features: ♦ Alumina Material ♦ DC - 5 GHz Performance ♦ 5 Watt Input Power ♦ CT= Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-1500JN-93-02 is a 15 dB Alumina chip attenuator. It has an input power rating of 5 watts, while maintaining a constant

Aluminum Nitride

Features: ♦ Aluminum Nitride Material ♦ DC - 4 GHz Performance ♦ 10 Watt Input Power ♦ CT = Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-2000JN-2S-01 is a 20 dB Aluminum Nitride chip attenuator. It has an input power of 10 watts, while maintain

Alumina

Features: ♦ Alumina Material ♦ DC - 4 GHz Performance ♦ 5 Watt Input Power ♦ CT = Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-2000JN-93 is a 20 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting

Alumina

Features: ♦ Alumina Material ♦ DC to 2.5 GHz Performance ♦ 5 Watt Input Power ♦ CT = Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-3000JN-93 is a 30 dB Alumina surface mount chip attenuator. It has an input power of 5 watts, while maintaining a

High Reliability

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High Reliability

文件：194.54 Kbytes Page：6 Pages

High Reliability

文件：194.54 Kbytes Page：6 Pages

High Reliability

文件：194.54 Kbytes Page：6 Pages

Rugged Construction

文件：247.04 Kbytes Page：6 Pages

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistor

文件：748.8 Kbytes Page：11 Pages

RF Power LDMOS Transistors

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.19064 Mbytes Page：19 Pages

RF Power LDMOS Transistors

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RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.19064 Mbytes Page：19 Pages

RF Power Field Effect Transistor

文件：748.8 Kbytes Page：11 Pages

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

Gallium Arsenide pHEMT RF Power Field Effect Transistor

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.49804 Mbytes Page：18 Pages

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

Rugged Construction

文件：247.04 Kbytes Page：6 Pages

Rugged Construction

文件：247.04 Kbytes Page：6 Pages

Rugged Construction

文件：247.04 Kbytes Page：6 Pages

封装/外壳：2010（5025 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DC-3GHZ 5W AL2O3 SURFACE MOUNT C RF/IF，射频/中频和 RFID 衰减器

封装/外壳：2010（5025 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DC-3GHZ 5W AL2O3 SURFACE MOUNT C RF/IF，射频/中频和 RFID 衰减器