封装/外壳：24-VQFN 裸露焊盘 包装：托盘 描述：RF RECEIVER ASK/FSK 433MHZ 24QFN RF/IF，射频/中频和 RFID 射频接收器

封装/外壳：24-VQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF RECEIVER UHF 433MHZ 24VQFN RF/IF，射频/中频和 RFID 射频接收器

CATV AMPLIFIER MODULE

The RF Line CATV Amplifier Module Description • 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier Features • Specified for 77–, 110– and 128–Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions App

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

500MHz Rail-to-Rail Amplifiers

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Switching Type(Self Oscillation Type with Coil)

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