4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67

4-megabit (512K x 8/256K x 16) Single 2.7-volt Battery-Voltage Flash Memory

文件：365.17 Kbytes Page：16 Pages

4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

封装/外壳：44-SOIC（0.525"，13.34mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 44SOIC 集成电路（IC） 存储器

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 48TSOP 集成电路（IC） 存储器