位置：首页 > IC中文资料第7905页 > AT49BV080
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT49BV080 | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 |   | |
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | ATMEL 爱特梅尔 | |
AT49BV080产品属性
- 类型
描述
- 型号
AT49BV080
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL/爱特梅尔 |
2025+ |
TSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
||||
ATMEL |
22+ |
TSOP |
8200 |
全新原装现货!自家库存! |
|||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ATMEL |
26+ |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
ATMEL/爱特梅尔 |
2450+ |
QFN |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NKK Switches |
2022+ |
119 |
全新原装 货期两周 |
||||
ATMEL/爱特梅尔 |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
|||
ATMEL/爱特梅尔 |
23+ |
TSSOP40 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
NKKSwitcheso |
23+ |
65600 |
AT49BV080芯片相关品牌
AT49BV080规格书下载地址
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