64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection

The Microchip AT28HC64BF is a high-performance64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of220mW. Deselected, CMOS standby current is less than 100µA. Accessed likestatic RAM for the read or write cycle without external components, it containsa 64-byte page register 8 Kbits x 8 (64 Kbit)\n5 V ±10% Supply\nParallel Interface\n70ns access time\nSelf-Timed Erase and Write Cycles\nPage Write and Byte Write\nData Polling for end of write detection\n2 ms Maximum Option\nLow Power Consumption\nRead / Write current 40 mA (Max)\nStandby current TTL 2 mA (Max), CMOS ;

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes Page：16 Pages

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

Description The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipatio

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes Page：16 Pages

Automatic Page Write Operation

文件：373.03 Kbytes Page：16 Pages

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes Page：16 Pages

封装/外壳：32-LCC（J 形引线） 包装：托盘 描述：IC EEPROM 64KBIT PARALLEL 32PLCC 集成电路（IC） 存储器

封装/外壳：28-DIP（0.600"，15.24mm） 包装：管件 描述：IC EEPROM 64KBIT PARALLEL 28DIP 集成电路（IC） 存储器

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes Page：16 Pages

64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection

Description The AT28HC64B is a high-performance electrically erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC64 is an 8K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28HC64 is a 5V only device. The X28HC64 features the JEDEC approved pinout for byte wide memories, compatible

5 Volt, Byte Alterable EEPROM

DESCRIPTION The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinto for byte-wide memories, compatible with

5 Volt, Byte Alterable EEPROM

文件：257.66 Kbytes Page：17 Pages