256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

256K (32K x 8) Paged Parallel EEPROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

封装/外壳：32-LCC（J 形引线） 包装：管件 描述：IC EEPROM 256KBIT PAR 32PLCC 集成电路（IC） 存储器

256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus