Up to 4 GHz Linear Power Silicon Bipolar Transistor

Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifer and oscillator applications operating over VHF, UHF and microwave frequencies

Up to 4 GHz Linear Power Silicon Bipolar Transistor

Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencie

Up to 4 GHz Linear Power Silicon Bipolar Transistor

Description\nThe AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifer and oscillator applications operating over VHF, UHF and microwave frequencies.\nE • High Output Power:\n   27.5 dBm Typical P1 dB at 2.0 GHz\n   26.5 dBm Typical P1 dB at 4.0 GHz\n• High Gain at 1 dB Compression:\n   10.0 dB Typical G1 dB at 2.0 GHz\n   6.5 dB Typical G1 dB at 4.0 GHz\n• 35% Total Efciency\n• Emitter Ballast Resistors\n• Hermetic, Metal/Beryllia Package;

封装/外壳：4-SMD（200 密耳 BeO） 包装：卷带（TR） 描述：RF TRANS NPN 20V 200SMD 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON RF TRANSISTOR

DESCRIPTION: The AT64020 is a Common Emitter Device Designed for Medium Power Class C Applications Operating at VHF,UHF Frequencies.

Up to 6 GHz Linear Power Silicon Bipolar Transistor

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