USB 3.1 Gen 1 / Gen 2 Controller

\n Engaged in Universal Serial Bus I/O solutions and storage application developments, ASMedia Technology is committed on expanding product portfolio with introducing a new generation of USB 3.1 to SATA 6Gbps bridge solution for USB Type-C storage application.\n ASM225CM is the latest generati • Compliant with USB3.1 Specification Revision 1.0\r\n• Compliant with Type-C Specification Revision 1.1\r\n• Compliant with USB Specification Revision 2.0\r\n• Support USB Super-Speed Plus, USB Super-Speed, High-Speed and Full-Speed Operation\r\n• Support USB Mass Storage Class, Bulk-Only Transport;

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)