GaAs E-pHEMT IF Amplifier

•22.6 dB Gain at 150 MHz\n•38 dBm Output IP3 at 150 MHz\n•MTTF > 100 Years\n•Single Supply: +3.3 V\n•Package Type: SOT89;

3 V IF Gain Block Amplifier MMIC over DC~1000 MHz

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Gain Block Amplfier MMIC over DC ~1000MHz

文件：588.69 Kbytes Page：11 Pages

Gain Block Amplfier MMIC over DC ~1000MHz

文件：588.69 Kbytes Page：11 Pages

VHF variable capacitance diode

DESCRIPTION The BB153 is a planar technology variable capacitance diode, in a SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Very

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Small terminal capacitance Ct • Two diodes are connected in series in the package

Programmable logic arrays 18 횞 42 횞 10

DESCRIPTION The PLS153 and PLS153A are two-level logic elements, consisting of 42 AND gates and 10 OR gates with fusible link connections for programming I/O polarity and direction. FEATURES •Field-Programmable (Ni-Cr links) •8 inputs •42 AND gates •10 OR gates •10 bidirecti

Programmable logic arrays 18 횞 42 횞 10

DESCRIPTION The PLUS153 PLDs are high speed, combinatorial Programmable Logic Arrays. The Philips Semiconductors state-of-the-art Oxide Isolated Bipolar fabrication process is employed to produce propagation delays as short as 12ns. FEATURES • I/O propagation delays (worst case) – PLUS153B

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package