GaAs E-pHEMT IF Amplifier

•21.8 dB Gain at 150 MHz\n•33 dBm Output IP3 at 150 MHz\n•MTTF > 100 Years\n•Single Supply: +3 V\n•Package Type: SOT363\n;

3 V IF Gain Block Amplifier MMIC over DC~1000 MHz

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Gain Block Amplifier MMIC over DC ~1000MHz

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Gain Block Amplifier MMIC over DC ~1000MHz

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L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

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3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages