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Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Infineon

英飞凌

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

文件:159.35 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

Reverse Conducting IGBT with monolithic body diode

文件:356.25 Kbytes Page:12 Pages

Infineon

英飞凌

Soft Switching Series

文件:293.73 Kbytes Page:12 Pages

Infineon

英飞凌

更新时间:2025-8-7 8:49:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI
23+
TO-247
7000
Infineon
24+
TO-247
6525
全新原装现货,欢迎询购!!
INFINEON
21+
TO-247
10000
原装现货假一罚十
INFINEON/英飞凌
22+
TO-247
90626
24+
TO247
56800
特价现货,下单送华为手机.香港 日本 新加坡
INFINEON/英飞凌
25+
3P
860000
明嘉莱只做原装正品现货
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
INFINEON/英飞凌
24+
NA/
5540
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
23+
30A,900V
20000
全新原装假一赔十
INFINEON
12+
TO247
209
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