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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AS4LC4M16DG-6SSLASHIT | 4MEGx16DRAM GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin | AUSTIN Austin Semiconductor |  |   |
AS4LC4M16DG-6SSLASHIT | 4MEGx16DRAMExtendedDataOut(EDO)DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN Austin Semiconductor | | |
4MEGx16DRAM GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin | AUSTIN Austin Semiconductor | | | |
4MEGx16DRAM GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin | AUSTIN Austin Semiconductor | | | |
4MEGx16DRAMExtendedDataOut(EDO)DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN Austin Semiconductor | | | |
4MEGx16DRAMExtendedDataOut(EDO)DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN Austin Semiconductor | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALLIANCE |
2023+ |
TSOP-44 |
50000 |
原装现货 |
|||
ALLINCE |
22+ |
TSOP-44 |
8200 |
原装现货库存.价格优势!! |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
23+ |
TO-277A(SMPC) |
50000 |
全新原装正品现货,支持订货 |
|||
ASI |
23+ |
SOJ24 |
16 |
全新原装正品现货,支持订货 |
|||
ASI |
23+ |
SOJ24 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ALLANCE |
2016+ |
SOJ |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
raltron |
24+ |
500000 |
行业低价,代理渠道 |
||||
ALSC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
ASI |
SOJ24 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
AS4LC4M16DG-6SSLASHIT芯片相关品牌
AS4LC4M16DG-6SSLASHIT规格书下载地址
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DdatasheetPDF页码索引
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