位置：首页 > IC中文资料第8366页 > AS4LC4M16DG-5S/XT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AS4LC4M16DG-5S/XT | 4 MEG x 16 DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in | AUSTIN |   | |
AS4LC4M16DG-5S/XT | 4 MEG x 16 DRAM Extended Data Out (EDO) DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN | | |
4 MEG x 16 DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in | AUSTIN | | ||
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN | | ||
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN | |
AS4LC4M16DG-5S/XT产品属性
- 类型
描述
- 型号
AS4LC4M16DG-5S/XT
- 制造商
AUSTIN
- 制造商全称
Austin Semiconductor
- 功能描述
4 MEG x 16 DRAM Extended Data Out(EDO) DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALLANCE |
2016+ |
SOJ |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ALLIANCE |
2023+ |
TSOP-44 |
50000 |
原装现货 |
|||
VISHAY |
25+23+ |
TO-277A(S |
31487 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY(威世) |
24+ |
TO277 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY/威世 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
ALLINCE |
22+ |
TSOP-44 |
8200 |
原装现货库存.价格优势!! |
|||
VISHAY |
25+ |
TO-277A(SMPC) |
3000 |
原装正品,欢迎来电咨询! |
|||
raltron |
24+ |
500000 |
行业低价,代理渠道 |
||||
ASI |
SOJ24 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
VISHAY/威世 |
24+ |
TO-277A(SMPC) |
60000 |
全新原装现货 |
AS4LC4M16DG-5S/XT芯片相关品牌
AS4LC4M16DG-5S/XT规格书下载地址
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DdatasheetPDF页码索引
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