位置：首页 > IC中文资料第8366页 > AS4LC4M16DG-5S/IT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AS4LC4M16DG-5S/IT | 4 MEG x 16 DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in | AUSTIN |   | |
AS4LC4M16DG-5S/IT | 4 MEG x 16 DRAM Extended Data Out (EDO) DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN | | |
4 MEG x 16 DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in | AUSTIN | | ||
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN | | ||
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM 文件：3.76256 Mbytes Page：25 Pages | AUSTIN | |
AS4LC4M16DG-5S/IT产品属性
- 类型
描述
- 型号
AS4LC4M16DG-5S/IT
- 制造商
AUSTIN
- 制造商全称
Austin Semiconductor
- 功能描述
4 MEG x 16 DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ASI |
23+ |
SOJ24 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
23+ |
TO-277A(SMPC) |
50000 |
全新原装正品现货,支持订货 |
|||
ALLINCE |
22+ |
TSOP-44 |
8200 |
原装现货库存.价格优势!! |
|||
ASI |
23+ |
SOJ24 |
16 |
全新原装正品现货,支持订货 |
|||
ALLANCE |
2016+ |
SOJ |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
raltron |
24+ |
500000 |
行业低价,代理渠道 |
||||
ALSC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
ASI |
SOJ24 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ASI |
21+ |
SOJ24 |
16 |
原装现货假一赔十 |
AS4LC4M16DG-5S/IT芯片相关品牌
AS4LC4M16DG-5S/IT规格书下载地址
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DdatasheetPDF页码索引
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