5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256Kx16 CMOS DRAM (EDO)

Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely lo

5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time

T(rac): 60ns; V(cc): 4.5 to 5.5V; high speed 256K x 16 CMOS DRAM (EDO)