Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ART2K0FE/SOT539/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

2000 Watt Single Output PFC and Current Sharing AC/DC Switching Power Supply

文件：166 Kbytes Page：4 Pages

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文件：406.68 Kbytes Page：4 Pages

AC-DC POWER SUPPLY

文件：472.45 Kbytes Page：7 Pages