Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. • High breakdown voltage enables class E operation up to VDS = 53 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Excellent ruggedness with no device degradation\n• Excellent thermal stability\n• For RoHS compliance see the product details on the Ampleon website\n;

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. • High breakdown voltage enables class E operation up to VDS = 53 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

封装/外壳：SOT-539AN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ART2K0FEG/SOT1248/REELDP 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

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