Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz. Features and benefits  High breakdo

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz. Features and benefits  High breakdo

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

Power LDMOS transistor

封装/外壳：SOT-467C 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ART150FE/SOT467/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

Power LDMOS transistor