N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. • Specified 300 Volt, 40.68 MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (

封装/外壳：TO-247-3 包装：托盘 描述：RF PWR MOSFET 1200V 6A TO-247 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

LINEAR INTEGRATED CIRCUITS

HIGH EFFICIENCY POWER OPERATIONAL AMPLIFIER

LINEAR INTEGRATED CIRCUITS

HIGH EFFICIENCY POWER OPERATIONAL AMPLIFIER

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a

Square Type

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