FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 730 A Surge current 10 kA

N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 730 A Surge current 10 kA

封装/外壳：TO-247-3 包装：托盘 描述：RF PWR MOSFET 500V 9A TO-247 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

N-CHANNEL ENHANCEMENT MODE

RF VDMOS Power Devices

封装/外壳：TO-247-3 包装：托盘 描述：RF PWR MOSFET 500V 9A TO-247 分立半导体产品 晶体管 - FET，MOSFET - 射频

463 Series Edge Connector | DIN 41612

Features High density 64 Contacts 2 Rows Metal-to-Metal Connector on 2.54mm (.100”) Grid Contact Material and Finish: Brass with selective gold plating and tin on tails : CLASS 3: 2- Gold Flash Plating CLAS

The 463 series NANO짼짰 fuse is a fast-acting, very high current fuse designed for high operating current applications

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2 to 20 GHz Low Noise AGC Amplifier

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60HC05K0 Infra-red Remote Control

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