FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 730 A Surge current 10 kA

N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 730 A Surge current 10 kA

封装/外壳：TO-247-3 包装：托盘 描述：RF PWR MOSFET 500V 9A TO-247 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

N-CHANNEL ENHANCEMENT MODE

RF VDMOS Power Devices

封装/外壳：TO-247-3 包装：托盘 描述：RF PWR MOSFET 500V 9A TO-247 分立半导体产品 晶体管 - FET，MOSFET - 射频

Two-Channel, Triple/Quad RGB Video Switches and Buffers

General Description The MAX463–MAX470 series of two-channel, triple/quad buffered video switches and video buffers combines high-accuracy, unity-gain-stable amplifiers with high-performance video switches. Fast switching time and low differential gain and phase error make this series of switches

60HC05K0 Infra-red Remote Control

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