RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

文件：121.53 Kbytes Page：4 Pages

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

文件：127.73 Kbytes Page：4 Pages

High power density

文件：250.31 Kbytes Page：2 Pages

High power density

文件：250.31 Kbytes Page：2 Pages

RF VDMOS Power Devices

铝壳/瓷管电阻

包装：散装 描述：METAL CLAD 300 W 25 OHM 5% 电阻器 底座安装电阻器

封装/外壳：矩形外壳 包装：散装 描述：RES CHAS MNT 25 OHM 5% 200W 电阻器 底座安装电阻器

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

文件：127.73 Kbytes Page：4 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

Silicon Complementary Transistors Audio Power Amplifier

Silicon Complementary Transistors Audio Power Amplifier

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE •IC Collector current ........................300A •VCEX Collector-emitter voltage ...........600V •hFE DC current gain.............................750 •Insulated Type •UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE •IC Collector current ........................300A •VCEX Collector-emitter voltage ...........600V •hFE DC current gain.............................750 •Insulated Type •UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor

Silicon planar type

文件：41.87 Kbytes Page：2 Pages